Dual Emission Laser-Induced Fluorescence (DELIF) in Chemical Mechanical Planarization
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چکیده
In this paper, we present a review of the measurements that Dual Emission Laser Induced Fluorescence (DELIF) has allowed us to make over the last 8 years. We have been able to measure many features of the slurry film between the wafer and the pad during polishing while simultaneously measuring the frictional drag. In particular, we measured slurry mean residence time, slurry temperature, and the slurry film thickness. All experiments are performed on a 1:2 scaled tabletop rotary polisher with variable pad speed, wafer downforce control, and in-situ conditioning. Mean residence times are strongly affected by conditioning. Slurry film thickness (about 20 μm on average, and accurate to within 1 μm) was a strong function of macro wafer curvature as well as downforce. Slurry temperature (accurate to 1◦C) increase with downforce and correlate closely to frictional drag. The resulting data are discussed for wafers polished with a 3.1 wt percent abrasive concentration slurry solution on flat Freudenberg FX-9 polishing pads. Correlations for friction and temperature are discussed, as well as thickness versus pressure and rotation rates.
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In-Situ Investigation of Wafer-Slurry-Pad Interactions during CMP
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